| 1. | Barrier height measurement of titania varistor ceramics
铈参杂的钛酸钡陶瓷的微结构演变 |
| 2. | The calculation of maximum potential barrier height of donor - doped barium titanate ceramics
施主掺杂钛酸钡陶瓷最大势垒高度计算 |
| 3. | The influence of incomplete ionization of impurity in 6h - sic on mosfet electrical characteristics is investigated considering the frenkel - pool effect , which can enhance the impurity ionization by lowing the effective barrier height
把frenkel - pool效应引入了对sicmos表面空间电荷区杂质不完全离化的分析，并建立起了在电场作用下sic杂质离化的新的模型。 |
| 4. | For the first time , we reported the barrier height of au / algan is 1 . 08ev by analysis on various i - v curves under corresponding temperatures . 3 ^ we reported oriented polycrystalline gan on silica substrates using a new method named ga nitridation
3 、采用金属镓层氮化技术，利用我们自行改造的热蒸发设备和氨气氮化设备，在无定形石英衬底上生长出具有择优取向的多晶gan ，取得了一些阶段性的成果。 |
| 5. | The results indicate that carriers recombining and causing luminescence in two organic layers by traversing their interface . the influence of barrier height of transport layer on current density , recombination current and recombination efficiency of the devices is great
结果表明：双层器件的发光是载流子隧穿内界面后在两有机层中的复合发光，输运层的势垒高度对载流子电流密度、复合电流密度以及器件的复合效率影响很大。 |
| 6. | Carrier aggregation on the interface between organic layer and electrodes may screen extra electric field and reduce barrier height for carrier injection . ( 3 ) we utilized oxd as buffer layer in anode and lif in cathode in single layer mehppv pleds . and the efficiency and brightness was doubled . the results implied that aggregation of minority carriers at the interface may the role of blocking layer
( 3 )在单层mehppv器件的阳极引入oxd作为电子阻挡修饰层， lif作为阴极修饰层，利用阻挡少数载流子实现界面电荷积累的方法提高了器件发光亮度和效率，分析了器件电流电压特性，使器件发光效率和亮度提高了一倍以上。 |
